![]() ![]() H01L29/00- Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g.H01L- SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10.Assignors: HEINEMANN, BERND, LIPPERT, GUNTHER, OSTEN, HANS-JORG Publication of US20030071278A1 publication Critical patent/US20030071278A1/en Application granted granted Critical Publication of US6750484B2 publication Critical patent/US6750484B2/en Anticipated expiration legal-status Critical Status Expired - Lifetime legal-status Critical Current Links ![]() Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.) Filing date Publication date Priority claimed from DE19652423 external-priority Priority claimed from DE19652423A external-priority patent/DE19652423A1/en Priority claimed from DE19755979A external-priority patent/DE19755979A1/en Application filed by Nokia Oyj filed Critical Nokia Oyj Priority to US10/234,438 priority Critical patent/US6750484B2/en Assigned to IHP GMBH-INNOVATIONS FOR HIGH PERFOEMANCE MICROELECTRONICS/INSTITUT FUR INNOVATIVE MIKROELEKTRONIK reassignment IHP GMBH-INNOVATIONS FOR HIGH PERFOEMANCE MICROELECTRONICS/INSTITUT FUR INNOVATIVE MIKROELEKTRONIK ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). ![]() Original Assignee Nokia Oyj Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.) ( en Inventor Gunther Lippert Hans-Jörg Osten Bernd Heinemann Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.) Expired - Lifetime Application number US10/234,438 Other versions US20030071278A1 Google Patents Silicon germanium hetero bipolar transistorĭownload PDF Info Publication number US6750484B2 US6750484B2 US10/234,438 US23443802A US6750484B2 US 6750484 B2 US6750484 B2 US 6750484B2 US 23443802 A US23443802 A US 23443802A US 6750484 B2 US6750484 B2 US 6750484B2 Authority US United States Prior art keywords layer silicon germanium base layer bipolar transistor Prior art date Legal status (The legal status is an assumption and is not a legal conclusion. Google Patents US6750484B2 - Silicon germanium hetero bipolar transistor US6750484B2 - Silicon germanium hetero bipolar transistor ![]()
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